ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,409, issued on July 7, was assigned to Kioxia Corp. (Tokyo). "Semiconductor device and method of manufacturing the same" was invented by Tat... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,410, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor memory device and method for man... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,411, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor memory device" was invented by J... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,412, issued on July 7, was assigned to Huawei Technologies Co. Ltd. (Shenzhen, China). "Memory, storage apparatus, and electronic device" wa... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,413, issued on July 7, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "One-time programmable (OTP) semiconductor dev... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,414, issued on July 7, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Three-dimensional memory device including horizontal s... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,415, issued on July 7, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor memory device" was invented by Hyo Sub Yeom (I... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,416, issued on July 7, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor memory device with reduced stepped area" was i... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,417, issued on July 7, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Three dimensional (3D) memory device and fabric... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,418, issued on July 7, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China). "Three-dimensional memory device wi... Read More